Model: 1B0912M600

Transistor

Properties:

Overall Length
Between 0.905 inches and 1.005 inches
Overall Height
Between 0.178 inches and 0.188 inches
Overall Width
Between 0.038 inches and 0.390 inches
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
75.0 collector to emitter voltage, dc and 2.0 collector to base voltage/static/emitter open
Power Rating Per Characteristic
600.0 watts power output and 751.0 watts power output
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
NSN
5961-01-624-9483
Part Number
1B0912M600
Description
Transistor
CAGE
1CXL4

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 1B0912M600 NSN 5961-01-624-9483

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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