Model: 1853-0635

Unitized Semiconductor Devices

Special Features:

Weapon system essential; all transistor junction pattern arrangement: pnp

Properties:

Inclosure Material
Metal
Overall Length
0.190 inches
Terminal Length
0.500 inches
Overall Diameter
0.185 inches
End Application
6625-01-259-1060 analyzer spectr; forrestal class cv; avenger class mcm; ticonderoga class cg (47); oliver perry class ffg; supply class aoe; spruance class dd (963); whidbey island calss lsd; kidd class ddg; arleigh burke class ddg; nimitz class cvn
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-71
Electrode Internally-electrically Connected To Case
Collector
Component Name And Quantity
2 transistor
Mounting Method
Terminal
Terminal Circle Diameter
0.100 inches
Features Provided
Hermetically sealed case
Criticality Code Justification
Feat
Semiconductor Material
Silicon all transistor
Voltage Rating In Volts Per Characteristic
45.0 collector to emitter voltage, dc all transistor
Power Rating Per Characteristic
400.0 milliwatts small-signal input power, common-collector preset all transistor
Transfer Ratio
200.0 static forward current transfer ratio, common-emitter all transistor
Terminal Type And Quantity
6 uninsulated wire lead
NSN
5961-01-337-0061
Part Number
1853-0635
Description
Semiconductor Devices,unitized
CAGE
50434

Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.

Part 1853-0635 NSN 5961-01-337-0061

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
61962
FIIG:
A110A0
Concept No.:
App. Key:
E
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CRITL:
Y

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
O
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
Q
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
060500
UFC:
81820
LTL:
NO RATING
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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