Model: 16931

Transistor
Description:

Metal inclosure material, 0.085 inches overall length, 0.230 inches overall diameter, junction contact internal configuration, collector electrode internally-electrically connected to case.

Properties:

Inclosure Material
Metal
Overall Length
0.085 inches
Overall Diameter
0.230 inches
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Collector
Internal Junction Configuration
Npn
Mounting Method
Terminal
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
60.0 breakdown voltage, collector-to-base, emitter open and 60.0 breakdown voltage, collector-to-emitter, base open and 5.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic
20.00 milliamperes collector current, dc
Power Rating Per Characteristic
50.0 watts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-00-006-1350
Part Number
16931
Description
Transistor
CAGE
00638

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 16931 NSN 5961-00-006-1350

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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