Model: 12SE319

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Overall Length
Between 0.250 inches and 0.450 inches
Overall Diameter
0.875 inches
Mounting Facility Quantity
2
Mounting Method
Unthreaded hole
Terminal Circle Diameter
Between 0.420 inches and 0.440 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
250.0 collector to base voltage/static/emitter open and 225.0 collector to emitter voltage/static/base open and 8.0 emitter to base voltage, static, collector open
Current Rating Per Characteristic
10.00 amperes source cutoff current and 2.00 amperes source cutoff current
Power Rating Per Characteristic
50.0 watts small-signal input power, common-collector preset
NSN
5961-01-113-7324
Part Number
12SE319
Description
Transistor
CAGE
21845

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 12SE319 NSN 5961-01-113-7324

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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