Model: 12F60

Diode Semiconductor Device

Properties:

Inclosure Material
Metal
Overall Length
0.405 inches
Mounting Facility Quantity
1
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Overall Width Across Flats
Between 0.424 inches and 0.437 inches
Thread Size
0.190 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
720.0 nonrepetitive peak reverse voltage and 600.0 working peak reverse voltage
Current Rating Per Characteristic
12.00 amperes forward current, total rms megahertz
Current Rating Per Characteristic
12.00 amperes average on-state current, 180 degrees conduction angle, average over a full 60-hz cycle
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius case
Thread Series Designator
Unf
Terminal Type And Quantity
1 threaded stud and 1 tab, solder lug
NSN
5961-00-137-7555
Part Number
12F60
Description
Semiconductor Device,diode
CAGE
81483

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part 12F60 NSN 5961-00-137-7555

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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