Model: 123166

Transistor
Description:

Metal inclosure material, 1.515 inches overall length, 0.250 inches overall height, 0.990 inches overall width, 2 mounting facility quantity.

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Metal
Overall Length
Between 1.515 inches and 1.550 inches
Overall Height
Between 0.250 inches and 0.450 inches
Overall Width
Between 0.990 inches and 1.015 inches
Mounting Facility Quantity
2
Internal Configuration
Junction contact
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-3
Electrode Internally-electrically Connected To Case
Collector
Mounting Method
Unthreaded hole
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
2.0 collector to emitter saturation voltage and 2.5 base to emitter saturation voltage
Current Rating Per Characteristic
1.00 milliamperes zero-gate-voltage source current preset
Terminal Type And Quantity
2 pin
NSN
5961-00-007-3673
Part Number
123166
Description
Transistor
CAGE
18338

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 123166 NSN 5961-00-007-3673

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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