Model: 123065-1
Diode Semiconductor DeviceSpecial Features:
Lfrequency 8.3 to 11.7 ghz; insertion loss 3.0 db; vswr 2: 1; power supply 5 vdc at 80 ma max and neg 12 vdc at 50 ma max; operating temp is neg 55 degrees cel to 85 degrees cel; storage temp neg 65 degrees cel to 125 degrees cel
Properties:
A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.
Part 123065-1 NSN 5961-01-535-7625
Material Classification
Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicatorsPricing & Availability Check
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Schedule B and Export
- Schedule B: 8541100070
- SITC: 77631
- End Use: Semiconductors
- NAICS: 334413
- USDA: 1
Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less
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