Model: 11481697-2

Diode Semiconductor Device

Properties:

Inclosure Material
Ceramic
Overall Length
0.040 inches
Overall Width
0.020 inches
End Application
Patriot, p/n 11481670
Mounting Method
Terminal
Semiconductor Material
Zinc sulfide
Voltage Rating In Volts Per Characteristic
18.5 breakdown voltage, dc
Current Rating Per Characteristic
20.00 amperes peak point current
Part Name Assigned By Controlling Agency
Semi-conductor device, diode-multilayer ceramic transient voltage supressor
Terminal Type And Quantity
2 bonding pad
NSN
5961-01-595-5176
Part Number
11481697-2
Description
Semiconductor Device,diode
CAGE
18876

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part 11481697-2 NSN 5961-01-595-5176

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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