Model: 10558279

Transistor

Properties:

Inclosure Material
Metal
Overall Length
0.400 inches
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Internal Junction Configuration
Npn
Mounting Method
Threaded stud
Overall Width Across Flats
0.687 inches
Thread Size
0.250 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
120.0 breakdown voltage, collector-to-base, emitter open and 8.0 breakdown voltage, emitter-to-base, collector open and 80.0 breakdown voltage, collector-to-emitter, base open
Current Rating Per Characteristic
10.00 amperes source cutoff current and 2.00 amperes source cutoff current
Power Rating Per Characteristic
70.0 watts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Thread Series Designator
Unf
Terminal Type And Quantity
3 tab, solder lug
NSN
5961-00-899-8119
Part Number
10558279
Description
Transistor
CAGE
19200

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 10558279 NSN 5961-00-899-8119

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
100.0
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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