Special Features:

Three-phase full-wave bridge, 6 diodes interconnected in a molded plastic encapsulated case, hexagon shaped case, 5 lug terminals, 2-0.140 in. Diameter unthreaded mtg holes counterbored 0.250 in. By 0.125 in. Mtg holes spaced 1.700 in. Min to 1.750 in. Max c to c; 8.0 amp dc output current; 100v peak reverse voltage per cell

Properties:

Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.