Model: 0P830WSL

Photo Semiconductor Device

Properties:

Overall Length
Between 0.187 inches and 0.202 inches
Mounting Facility Quantity
1
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-18
Mounting Method
Unthreaded hole
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
15.0 breakdown voltage, collector-to-emitter, base open
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius ambient air
NSN
5961-01-444-8076
Part Number
0P830WSL
Description
Semiconductor Device,photo
CAGE
32694

A semiconductor device (1) which is responsive to visible or infrared radiant energy. May or may not include mounting hardware and/or heat sink. Excludes semiconductor device (1), diode; semiconductor device (1), thyristor and transistor. For solid state devices which emit visible or infrared radiant energy, see light emitting diode.

Part 0P830WSL NSN 5961-01-444-8076

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20587
FIIG:
A110A0
Concept No.:
1
App. Key:
C
Cond. Code:
2
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541409500
  • SITC: 77637
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Photosensitive semiconductor devices, nesoi

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