Model: 0P804TX

Photo Semiconductor Device

Special Features:

Phototransistor

Properties:

Inclosure Material
Plastic
Overall Length
Between 5.890 millimeters and 6.860 millimeters
End Application
Rvr new generation
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
30.0 collector to emitter voltage, dc and 30.0 collector to base voltage, dc and 5.0 emitter to base voltage, dc and 5.0 emitter to collector voltage, dc
Terminal Type And Quantity
3 tab, solder lug
NSN
5961-01-483-2626
Part Number
0P804TX
Description
Semiconductor Device,photo
CAGE
32694

A semiconductor device (1) which is responsive to visible or infrared radiant energy. May or may not include mounting hardware and/or heat sink. Excludes semiconductor device (1), diode; semiconductor device (1), thyristor and transistor. For solid state devices which emit visible or infrared radiant energy, see light emitting diode.

Part 0P804TX NSN 5961-01-483-2626

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20587
FIIG:
A110A0
Concept No.:
1
App. Key:
C
Cond. Code:
2
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541409500
  • SITC: 77637
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Photosensitive semiconductor devices, nesoi

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