Model: 0N649600-1

Memory Microcircuit

Special Features:

Digital cmos field programmable gate array

Properties:

Body Length
30.6 millimeters
Body Width
30.6 millimeters
Body Height
Between 3.2 millimeters and 3.4 millimeters
Operating Tempurature Range
+0.0/+85.0 degrees celsius
Storage Tempurature Range
-65.0/+150.0 degrees celsius
End Application
Kg-75a ultrafastlane
Features Provided
Electrostatic sensitive
Inclosure Material
Plastic
Inclosure Configuration
Leaded chip carrier
Criticality Code Justification
Agav and cbbl
Part Name Assigned By Controlling Agency
Microcircuit digital
Voltage Rating And Type Per Characteristic
-2.0 volts power source and 7.0 volts power source
Capitance Rating Per Characteristic
8.00 input picofarads and 8.00 output picofarads
Memory Device Type
Programmable
Memory Capacity
1320 logic cells
Terminal Type And Quantity
208 gullwing
NSN
5962-01-532-0178
Part Number
0N649600-1
Description
Microcircuit,memory
CAGE
98230

A circuit designed to store information and/or coded instructions for later use. Item has pins or other connections to install in a computer or computing device. does not include magnetic drums, tapes, punched cards or the like. for items that have portable type connections see memory, portable, solid state.

Part 0N649600-1 NSN 5962-01-532-0178

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
41015
FIIG:
A458A0
Concept No.:
1
App. Key:
F
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CS
CRITL:
Y

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Schedule B and Export
  • Schedule B: 8542900000
  • SITC: 77689
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Electronic integrated circuits and microassembly parts

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