Model: 0912-7

Transistor

Properties:

Inclosure Material
Glass
End Application
Ca70608-00 (19156) , receiver-transmitter
Mounting Facility Quantity
2
Mounting Method
Unthreaded hole
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
60.0 collector to emitter voltage, dc and 4.0 emitter to base voltage, dc
Current Rating Per Characteristic
1.00 amperes collector current, dc
Power Rating Per Characteristic
50.0 watts forward power dissipation, dc and 7.0 watts power output
Part Name Assigned By Controlling Agency
Dwg: rf transistor; cage: 7 watts, 50 volts, pulsed avionics 960 - 1215 mhz, common base bipolar transistor
Precious Material And Location
Thin film metallization gold
NSN
5961-01-581-2519
Part Number
0912-7
Description
Transistor
CAGE
0PJR2

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 0912-7 NSN 5961-01-581-2519

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
G
ESD:
B
ESD:
B
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
3
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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