Model: 00017-3

Transistor

Special Features:

Low frequency low power pnp bjt; junction pattern arrangement: npn

Properties:

Inclosure Material
Glass
Overall Length
0.510 millimeters
Terminal Length
0.260 millimeters
Mounting Facility Quantity
4
Internal Configuration
Junction contact
Mounting Method
Terminal
Terminal Circle Diameter
0.370 millimeters
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
20.0 breakdown voltage, collector to emitter, sustained and 25.0 breakdown voltage, collector-to-base, emitter open
Current Rating Per Characteristic
600.00 milliamperes zero-gate-voltage source current blank
Power Rating Per Characteristic
400.0 watts small-signal input power, common-emitter absolute
Maximum Operating Tempurature Per Measurement Point
-55.0 degrees celsius case and 175.0 degrees celsius case
Terminal Type And Quantity
4 uninsulated wire lead
NSN
5961-00-836-7174
Part Number
00017-3
Description
Transistor
CAGE
58634

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 00017-3 NSN 5961-00-836-7174

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
100.0
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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